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DISCRETE POWER DIODES and THYRISTORS
DATA BOOK
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ST223C..C SERIES
INVERTER GRADE THYRISTORS Features
Metal case with ceramic insulator International standard case TO-200AB (A-PUK) All diffused design Center amplifying gate Guaranteed high dV/dt Guaranteed high dI/dt High surge current capability Low thermal impedance High speed performance
Hockey Puk Version
390A
Typical Applications
Inverters Choppers Induction heating All types of force-commutated converters
case style TO-200AB (A-PUK)
Major Ratings and Characteristics
Parameters
IT(AV) @ Ths IT(RMS) @ Ths ITSM @ 50Hz @ 60Hz I 2t @ 50Hz @ 60Hz V DRM /V RRM tq range TJ
ST223C..C
390 55 745 25 5850 6130 171 156 400 to 800 10 to 30 - 40 to 125
Units
A C A C A A KA2s KA2s V s
C
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ELECTRICAL SPECIFICATIONS Voltage Ratings
Voltage Type number Code
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V DRM /V RRM , maximum repetitive peak voltage
V
VRSM , maximum non-repetitive peak voltage
V 500
I DRM /I RRM max.
@ TJ = TJ max. mA 40
04 ST223C..C 08
400 800
900
Current Carrying Capability
Frequency
180oel 50Hz 400Hz 1000Hz 2500Hz Recovery voltage Vr Voltage before turn-on Vd Rise of on-state current di/dt Heatsink temperature Equivalent values for RC circuit 930 910 780 490 50 V DRM 50 40
ITM 180oel 800 770 650 400 50 50 55 1430 1490 1430 1070 50 V DRM 40
ITM 100s 1220 1300 1260 920 50 55 5870 3120 1880 1000 50 V DRM 40
ITM
Units
5240 2740 1640 860 50 55 V A/s C A
47 / 0.22F
47 / 0.22F
47 / 0.22F
On-state Conduction
Parameter
I T(AV) Max. average on-state current @ Heatsink temperature I T(RMS) Max. RMS on-state current I TSM Max. peak, one half cycle, non-repetitive surge current
ST223C..C
390 (150) 55 (85) 745 5850 6130 4920 5150
Units Conditions
A C 180 conduction, half sine wave double side (single side) cooled DC @ 25C heatsink temperature double side cooled t = 10ms A t = 8.3ms t = 10ms t = 8.3ms t = 10ms t = 8.3ms KA2s t = 10ms t = 8.3ms KA2s No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = TJ max
It
2
Maximum I t for fusing
2
171 156 121 110
I 2 t
Maximum I2t for fusing
1710
t = 0.1 to 10ms, no voltage reapplied
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Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Fig. 5 - On-state Power Loss Characteristics
Fig. 6 - On-state Power Loss Characteristics
Fig. 7 - Maximum Non-repetitive Surge Current
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Fig. 8 - Maximum Non-repetitive Surge Current
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Fig. 9 - On-state Voltage Drop Characteristics
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
Fig. 11 - Reverse Recovered Charge Characteristics
Fig. 12 - Reverse Recovery Current Characteristics
Fig. 13 - Frequency Characteristics
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Fig. 14 - Frequency Characteristics
Fig. 15 - Frequency Characteristics
Fig. 16 - Maximum On-state Energy Power Loss Characteristics
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Fig. 17 - Gate Characteristics
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On-state Conduction
Parameter
V TM Max. peak on-state voltage
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ST223C..C Units
1.58 1.05 1.09 0.88 m 0.82 600 1000 mA V
Conditions
ITM= 600A, TJ = TJ max, tp = 10ms sine wave pulse (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. (I > x IT(AV)), TJ = TJ max. (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. (I > x IT(AV)), TJ = TJ max. T J = 25C, I T > 30A T J = 25C, V A= 12V, Ra = 6, I G= 1A
V T(TO)1 Low level value of threshold voltage V T(TO)2 High level value of threshold voltage r t1 r t2 IH IL Low level value of forward slope resistance High level value of forward slope resistance Maximum holding current Typical latching current
Switching
Parameter
di/dt Max. non-repetitive rate of rise of turned-on current td tq Typical delay time Max. turn-off time
ST223C..C Units
1000 0.78 Min 10 Max 30 s A/s
Conditions
TJ = TJ max, VDRM = rated VDRM ITM = 2 x di/dt TJ= 25C, VDM = rated VDRM, ITM = 50A DC, tp= 1s Resistive load, Gate pulse: 10V, 5 source TJ = TJ max, ITM = 300A, commutating di/dt = 20A/s VR = 50V, tp = 500s, dv/dt: see table in device code
Blocking
Parameter
dv/dt IRRM IDRM Maximum critical rate of rise of off-state voltage Max. peak reverse and off-state leakage current
ST223C..C Units
500 40 V/s mA
Conditions
TJ = TJ max. linear to 80% VDRM, higher value available on request TJ = TJ max, rated V DRM/V RRM applied
Triggering
Parameter
PGM Maximum peak gate power
ST223C..C Units
60 10 10 20 V W A
Conditions
TJ = TJ max, f = 50Hz, d% = 50 TJ = TJ max, tp 5ms
PG(AV) Maximum average gate power IGM +VGM -VGM IGT VGT IGD VGD Max. peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage Max. DC gate current required to trigger Max. DC gate voltage required to trigger Max. DC gate current not to trigger Max. DC gate voltage not to trigger
TJ = TJ max, tp 5ms
5 200 3 20 0.25 mA TJ = 25C, VA = 12V, Ra = 6 V mA V TJ = TJ max, rated VDRM applied
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Thermal and Mechanical Specification
Parameter
TJ Tstg Max. operating temperature range Max. storage temperature range
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ST223C..C
-40 to 125 -40 to 150 0.17 0.08 0.033 0.017 5900 (600)
Units Conditions
C DC operation single side cooled K/W DC operation double side cooled DC operation single side cooled DC operation double side cooled
RthJ-hs Max. thermal resistance, junction to heatsink RthC-hs Max. thermal resistance, case to heatsink F Mounting force, 10%
K/W N (Kg) g
wt
Approximate weight Case style
50
TO - 200AB (A-PUK)
See Outline Table
RthJ-hs Conduction
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)
Conduction angle
180 120 90 60 30
Sinusoidal conduction Rectangular conduction
Single Side Double Side 0.015 0.019 0.024 0.035 0.060 0.017 0.019 0.024 0.035 0.060 Single Side Double Side 0.011 0.019 0.026 0.036 0.060 0.011 0.019 0.026 0.037 0.061
Units
Conditions
K/W
TJ = TJ max.
Ordering Information Table
Device Code
ST
1 1 - Thyristor 2 - Essential part number 3 - 3 = Fast turn off 4 - C = Ceramic Puk
22
2
3
3
C
4
08
5
C
6
H
7
K
8
1
9 10
5 - Voltage code: Code x 100 = VRRM (See Voltage Rating Table) 6 - C = Puk Case TO-200AB (A-PUK) 7 - Reapplied dv/dt code (for tq test condition) 8 - tq code 9 - 0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads) 1 = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads) 2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads) 3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads) 10 - Critical dv/dt: None = 500V/sec (Standard value) L = 1000V/sec (Special selection)
tq (s)
dv/dt - tq combinations available
dv/dt (V/s) 10 12 15 18 20 25 30 20 CN CM CL CP CK --50 DN DM DL DP DK --100 EN EM EL EP EK --200 FN * FM FL * FP FK --400 --HL HP HK HJ HH
*Standard part number.
All other types available only on request.
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Outline Table
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ANODE TO GATE CREEPAGE DISTANCE: 7.62 (0.30) MIN. STRIKE DISTANCE: 7.12 (0.28) MIN. 19 (0.75) DIA. MAX. 0.3 (0.01) MIN.
13.7 / 14.4 (0.54 / 0.57) 0.3 (0.01) MIN. 19 (0.75) DIA. MAX. 38 (1.50) DIA MAX. GATE TERM. FOR 1.47 (0.06) DIA. PIN RECEPTACLE
Case Style TO-200AB (A-PUK)
All dimensions in millimeters (inches)
2 HOLES 3.56 (0.14) x 1.83 (0.07) MIN. DEEP 6.5 (0.26) 4.75 (0.19)
25 5
42 (1.65) MAX. 28 (1.10)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
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